Infineon BSS806NEH6327: High-Performance N-Channel TrenchMOS Transistor

The Infineon BSS806NEH6327 is an advanced N-Channel TrenchMOS transistor engineered to deliver superior performance in a wide range of power management applications. Designed using Infineon’s cutting-edge TrenchMOS technology, this MOSFET combines low on-state resistance (RDS(on)) with high switching speed, making it an ideal choice for high-efficiency and compact electronic designs.

One of the standout features of the BSS806NEH6327 is its exceptionally low gate charge and optimized reverse recovery characteristics. These attributes contribute to reduced switching losses, enabling improved thermal performance and higher overall system efficiency. With a voltage rating of 30V and a continuous drain current of 6.7A, this transistor is particularly suited for load switching, DC-DC conversion, and motor control applications in consumer electronics, automotive systems, and industrial power supplies.

The device is housed in a SOT-223 package, which offers an excellent balance between power dissipation and board space savings. Its robust construction ensures high reliability under demanding operating conditions, including elevated temperatures and high current loads. Furthermore, the BSS806NEH6327 is compliant with RoHS directives, aligning with global environmental standards.

ICGOOODFIND:

The Infineon BSS806NEH6327 stands out as a high-performance MOSFET that excels in efficiency, thermal management, and space-constrained applications, making it a preferred component for modern power electronics.

Keywords:

TrenchMOS Technology, Low RDS(on), High Switching Speed, Power Management, SOT-223 Package