Infineon SPP21N50C3: A Comprehensive Technical Overview of the 500V N-Channel Power MOSFET

The Infineon SPP21N50C3 is a robust N-channel power MOSFET engineered to deliver high efficiency and reliability in demanding power conversion applications. As part of Infineon's extensive portfolio of power semiconductors, this device is optimized for switching power supplies, industrial drives, and other high-voltage systems requiring robust performance and thermal stability.

Key Electrical Characteristics and Features

At the core of the SPP21N50C3 is its 500V drain-source voltage (VDS) rating, providing a wide margin of safety for operations in off-line switch-mode power supplies (SMPS) and other applications with high-voltage rails. The device boasts a low on-state resistance (RDS(on)) of 0.19 Ω, which is a critical factor in minimizing conduction losses. This low RDS(on) directly translates to higher efficiency, as less power is dissipated as heat during the on-state operation.

The MOSFET is built using Infineon's advanced Super Junction (SJ) technology. This technology enables a superior trade-off between low on-resistance and fast switching performance. The result is a component that can operate at high frequencies while maintaining low switching losses, making it an excellent choice for modern, compact, and efficient power supply designs.

Furthermore, the SPP21N50C3 offers high dv/dt capability and excellent avalanche ruggedness. These characteristics enhance the device's durability against voltage spikes and harsh switching conditions, ensuring long-term system reliability. The integrated fast body diode also contributes to improved reverse recovery performance, which is vital for circuits involving inductive loads.

Package and Thermal Performance

Housed in a TO-220FP package, the SPP21N50C3 is designed for effective thermal management. This package offers a good balance between mounting flexibility and heat dissipation capability. The maximum continuous drain current (ID) is 21 A, and the device can handle significant pulse currents, supported by its ability to operate at a junction temperature up to 150 °C. This high-temperature capability allows designers to push the limits of power density while maintaining system integrity.

Target Applications

The combination of high voltage rating, low on-resistance, and robust switching performance makes the SPP21N50C3 ideally suited for a wide array of applications. Primary uses include:

Switch-Mode Power Supplies (SMPS): Particularly in power factor correction (PFC) and main inverter stages.

Lighting Control: For high-performance electronic ballasts and LED driving circuits.

Industrial Motor Drives and Inverters: Providing efficient and reliable switching in control modules.

Uninterruptible Power Supplies (UPS): Enhancing efficiency in power conversion stages.

ICGOOODFIND: The Infineon SPP21N50C3 stands out as a highly efficient and reliable 500V power MOSFET. Its exceptional blend of low on-resistance, fast switching speed courtesy of Super Junction technology, and avalanche ruggedness makes it a superior choice for designers aiming to maximize performance and durability in high-voltage power systems.

Keywords: Power MOSFET, Super Junction Technology, 500V, Low RDS(on), Switch-Mode Power Supply (SMPS)