Infineon IRFS3207TRLPBF: High-Performance Power MOSFET for Advanced Switching Applications

Release date:2025-11-05 Number of clicks:199

Infineon IRFS3207TRLPBF: High-Performance Power MOSFET for Advanced Switching Applications

In the realm of modern power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IRFS3207TRLPBF stands out as a premier solution, engineered to meet the rigorous demands of advanced switching applications. This N-channel power MOSFET, built on Infineon's advanced proprietary technology, sets a high benchmark for performance in sectors such as industrial motor drives, switch-mode power supplies (SMPS), and automotive systems.

A key highlight of the IRFS3207TRLPBF is its exceptionally low on-state resistance (RDS(on)) of just 2.3 mΩ maximum at 10 V. This ultra-low resistance directly translates to minimized conduction losses, enabling higher efficiency and reduced heat generation during operation. Even under high-current conditions, the device maintains superior performance, making it ideal for high-power applications where energy savings and thermal management are critical.

The MOSFET is rated for a drain-source voltage (VDS) of 75 V and a continuous drain current (ID) of 195 A, with the capability to handle pulse currents up to 780 A. This robust voltage and current rating ensure reliable operation in demanding environments, including automotive starter systems and high-frequency power converters. The device’s optimized switching characteristics further enhance its suitability for high-frequency circuits, reducing switching losses and enabling compact, efficient designs.

Packaged in the robust TO-220 FullPak, the IRFS3207TRLPBF offers outstanding thermal and mechanical reliability. The fully molded package provides superior isolation and protection against environmental factors, making it suitable for harsh conditions. Additionally, the low thermal resistance of the package ensures efficient heat dissipation, contributing to the overall longevity and stability of the system.

Another significant advantage is its low gate charge (QG) and fast switching speed, which allow for reduced driving losses and higher frequency operation. This feature is particularly beneficial in applications requiring precise power control and rapid response, such as in DC-DC converters and motor control circuits.

ICGOOODFIND: The Infineon IRFS3207TRLPBF is a top-tier power MOSFET that combines ultra-low RDS(on), high current capability, and excellent thermal performance. It is an optimal choice for designers seeking to enhance efficiency and reliability in high-power switching applications.

Keywords: Power MOSFET, Low RDS(on), High Current Switching, Thermal Performance, TO-220 FullPak.

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