Infineon IPB80N06S4-05: Key Specifications and Application Overview

The Infineon IPB80N06S4-05 is a benchmark N-channel power MOSFET engineered with the renowned OptiMOS technology, setting a high standard for efficiency and reliability in power conversion and management applications. This device is specifically designed to offer an optimal blend of low on-state resistance and high switching performance, making it a preferred choice for a wide array of demanding electronic systems.

A central feature of this MOSFET is its exceptionally low on-state resistance (R DS(on)) of just 4.5 mΩ (max. at V GS = 10 V). This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for more compact designs with smaller heat sinks. The component is rated for a drain-source voltage (V DS) of 60 V and a continuous drain current (I D) of 80 A at a case temperature of 25°C, providing robust performance for high-current paths. Its low gate charge (Q G) further enhances its appeal by enabling very fast switching speeds, which is critical for high-frequency operations that reduce the size of passive components like inductors and capacitors.

Housed in the space-efficient TO-263 (D2PAK) surface-mount package, the IPB80N06S4-05 is perfectly suited for automated PCB assembly. This package offers an excellent balance between power handling capability and board space savings, making it ideal for modern, dense power electronics.

The combination of its key specifications makes the IPB80N06S4-05 exceptionally versatile. Its primary application domains include:

Switching Power Supplies (SMPS): It is a cornerstone in high-efficiency AC-DC and DC-DC converters for servers, telecom infrastructure, and industrial equipment.

Motor Control and Drives: The MOSFET's high current handling and robustness are ideal for driving motors in applications ranging from industrial automation to automotive systems.

Load Switching and Power Management: It serves as a highly efficient switch in battery management systems (BMS), hot-swap controllers, and power distribution units.

Synchronous Rectification: Its fast switching and low R DS(on) are leveraged in secondary-side rectification stages to boost overall power supply efficiency significantly.

ICGOOODFIND: The Infineon IPB80N06S4-05 stands out as a high-performance, highly efficient power MOSFET. Its defining characteristics—ultra-low on-state resistance, high current capability, and fast switching speed—make it an indispensable component for designers aiming to maximize efficiency and power density in modern electronic systems.

Keywords: Power MOSFET, Low RDS(on), High Current Switching, OptiMOS Technology, Synchronous Rectification.