Infineon IPW65R037C6FKSA1: 650V CoolMOS™ Power Transistor for High-Efficiency Switching Applications

The demand for highly efficient and reliable power electronics continues to grow across industries such as industrial automation, renewable energy, and consumer power supplies. Addressing this need, Infineon Technologies introduces the IPW65R037C6FKSA1, a 650V superjunction MOSFET that sets a new benchmark in performance for high-efficiency switching applications. As part of the renowned CoolMOS™ C6 series, this transistor is engineered to deliver exceptional efficiency, thermal performance, and power density.

A key highlight of the IPW65R037C6FKSA1 is its extremely low on-state resistance (RDS(on)) of just 37 mΩ. This ultra-low resistance minimizes conduction losses, which is critical for applications operating at high currents. Combined with its superior switching characteristics, the device significantly reduces both switching and conduction losses, leading to higher overall system efficiency. This makes it an ideal choice for power supplies, solar inverters, motor drives, and LED lighting systems where energy savings and thermal management are paramount.

The transistor is built on Infineon’s advanced superjunction (SJ) technology, which allows for outstanding performance in hard- and soft-switching topologies. Its optimized gate charge (Qg) and figure of merit (FoM) ensure faster switching speeds while maintaining robustness against voltage spikes and transients. The 650V voltage rating provides a comfortable safety margin for operation in universal mains applications, including those with fluctuating input voltages.

Thermal management is further enhanced thanks to the low thermal resistance of the TO-247 package, enabling better heat dissipation and allowing designers to either reduce heatsink size or push for higher power output. This contributes to more compact and cost-effective designs without compromising reliability.

In addition, the device is designed with ease of use in mind. It features a logic-level compatible gate, simplifying drive circuit design and providing greater flexibility when selecting gate drivers or controllers.

ICGOOODFIND:

The Infineon IPW65R037C6FKSA1 stands out as a high-performance power MOSFET that excels in reducing losses and improving power density. Its combination of ultra-low RDS(on), excellent switching behavior, and thermal properties makes it a superior solution for next-generation high-efficiency power systems.

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Keywords:

CoolMOS™ C6, Low RDS(on), High-Efficiency Switching, 650V MOSFET, Power Transistor