Infineon BSC500N20NS3G: High-Performance 20V OptiMOS 5 Power MOSFET for Advanced Switching Applications

In the realm of power electronics, efficiency, power density, and thermal performance are paramount. Addressing these critical demands, Infineon Technologies introduces the BSC500N20NS3G, a state-of-the-art 20V N-channel power MOSFET from the groundbreaking OptiMOS™ 5 technology platform. This device is engineered to set a new benchmark in performance for advanced switching applications, ranging from server and telecom power supplies to motor drives and synchronous rectification.

The cornerstone of the BSC500N20NS3G's superiority is its exceptionally low figure-of-merit (FOM), achieved by optimizing the trade-off between on-state resistance (R DS(on)) and gate charge (Q G). With a maximum R DS(on) of just 0.5 mΩ at V GS = 10 V, this MOSFET minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. Simultaneously, its low gate charge ensures swift switching transitions, which is crucial for operating at high frequencies. This combination enables designers to push switching frequencies higher without sacrificing efficiency, leading to smaller magnetic components and overall more compact power supply designs.

Beyond raw switching performance, the device offers enhanced robustness and reliability. It features a low effective output capacitance (C OSS(eff)), which directly contributes to reduced switching losses in hard-switching topologies. The OptiMOS 5 technology also provides an improved body diode with softer reverse recovery characteristics, enhancing performance in phases of dead-time and improving system reliability.

Housed in an industry-standard SuperSO8 package, the BSC500N20NS3G offers an excellent power-to-size ratio. This package is renowned for its low parasitic inductance and superior thermal characteristics, facilitating efficient heat dissipation from the die to the PCB. This makes it an ideal candidate for space-constrained applications where thermal management is a key challenge.

ICGOODFIND: The Infineon BSC500N20NS3G represents a significant leap forward in power MOSFET technology. Its optimal blend of ultra-low R DS(on), low gate charge, and excellent switching characteristics makes it a premier choice for designers aiming to maximize efficiency and power density in next-generation advanced switching applications.

Keywords: OptiMOS 5, Low R DS(on), High-Frequency Switching, SuperSO8 Package, Power Density